creat by art - very low profile - typical height of 0.68mm - reduce switching and conduction loss - ideal for automated placement - ultrafast recovery times for high frequency - halogen-free according to iec 61249-2-21 definition ESH1JM is ideal device for the compact space pcb design. specially as boost diode in power factor correction circuitry. the device is also intended for use as a free wheeling diode in power supplies for chargers, led lighting, and other power switching applications. symbol unit v rrm v i f(av) a trr ns cj pf t j o c t stg o c note 2: reverse recovery test conditions: if=0.5a, ir=1.0a, irr=0.25a note 4: thermal resistance r ja - from junction to ambient, r jm - and junction to mount document number ds_d1311039 version:a13 typ. max. 1 50 maximum reverse recovery time (note 2) 25 taiwan semiconductor ESH1JM 600 typ. max. 1.25 1.5 marking code maximum instantaneous forward voltage (note 1) @ 1 a v f typical junction capacitance (note 3) 3 typical thermal resistance (note 4) r jm r ja 40 92 note 1: pulse test with pw=300 sec, 1% duty cycle -55 to +150 note 3: measured at 1 mhz and applied reverse voltage of 4.0 v dc maximum reverse current @ rated vr t j =25 t j =125 i r a - 5 o c/w operating junction temperature range storage temperature range -55 to +150 v maximum average forward rectified current 1 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 15 mechanical data case: micro sma micro sma molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free, rohs compliant a d7 terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test application ESH1JM surface mount ultrafast rectifiers features - moisture sensitivity level: level 1, per j-std-020 maximum repetitive peak reverse voltage polarity: indicated by cathode band weight : 0.006g (approximately) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec free datasheet http:///
part no. ESH1JM note: for micro sma: packing code (whole series with green compound) part no. ESH1JM (ta=25 unless otherwise noted) document number ? ds_d1311039 version:a13 example ordering information package green compound code suffix "g" ESH1JM taiwan semiconductor packing 3000 / 7" plastic reel rs micro sma packing code ratings and characteristics curves packing code rs description green compound ESH1JM rsg preferred p/n g green compound code 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 175 average forward current (a) lead temperature ( o c) fig.1 maximum forward current derating curve 0 5 10 15 110100 peak forward surage current (a) number of cycles at 60 hz fig. 2 maximum forward surge current 8.3ms single half sine-wave 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 instantaneous forward current (a) forward voltage (v) fig. 3 typical forward characteristics t j =25 : t j =125 : resistive or induvtive load 0.001 0.01 0.1 1 10 0 20406080100 instantaneous reverse current (ua) percent of rated peak reverse voltage (%) fig. 4- typical reverse characteristics t j =25 : t j =125 : free datasheet http:///
min max min max a 2.30 2.70 0.091 0.106 b 2.10 2.30 0.083 0.091 c 0.63 0.73 0.025 0.029 d 0.10 0.20 0.004 0.008 e 1.15 1.35 0.045 0.053 f 0.65 0.85 0.026 0.034 g 1.15 1.35 0.045 0.053 h 0.75 0.95 0.030 0.037 i 1.10 1.50 0.043 0.059 j 0.55 0.75 0.022 0.030 k 0.55 0.75 0.022 0.030 l 0.65 0.85 0.026 0.034 p/n = marking code yw = date code document number ? ds_d1311039 version:a13 marking diagram taiwan semiconductor c0.5 d0.8 e1.0 suggested pad layout symbol unit (mm) a1.1 b2.0 ESH1JM package outline dimensions dim. unit (mm) unit (inch) free datasheet http:///
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